BC857AT datasheet(1/3 Pages) DIODES

Part #	BC857AT

Description	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

PDF	3 Pages

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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BC857AT, BT, CT

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Die Construction

•

Complementary NPN Types Available (BC847AT,BT,CT)

•

Ultra-Small Surface Mount Package

•

Lead Free/RoHS Compliant (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

•

"Green" Device (Note 4 and 5)

Mechanical Data

•

Case: SOT-523

•

Case Material - Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

•

Terminal Connections: See Diagram

•

Marking Code: See Table Below & Diagram on Page 2

•

Ordering & Date Code Information: See Page 2

•

Weight: 0.002 grams (approximate)

DS30275 Rev. 9 - 2

1 of 3

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BC857AT, BT, CT

Type

Marking

BC857AT

3V

BC857BT

3W

BC857CT

3G

SOT-523

Dim

Min

Max

Typ

A

0.15

0.30

0.22

B

0.75

0.85

0.80

C

1.45

1.75

1.60

D

⎯

0.50

G

0.90

1.10

1.00

H

1.50

1.70

1.60

J

0.00

0.10

0.05

K

0.60

0.80

0.75

L

0.10

0.30

0.22

M

0.10

0.20

0.12

N

0.45

0.65

0.50

α

0

°

8

°

⎯

All Dimensi

mm

ons in

A

M

J

L

D

B C

H

K

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-45

V

Emitter-Base Voltage

VEBO

-5.0

V

Collector Current

IC

-100

mA

Power Dissipation

(Note 1)

Pd

150

mW

Thermal Resistance, Junction to Ambient

(Note 1)

RθJA

833

°C/W

Operating and Storage Temperature Range

Tj, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

(Note 3)

V(BR)CBO

-50

—

V

IC = 10μA, IB = 0

Collector-Emitter Breakdown Voltage

(Note 3)

V(BR)CEO

-45

—

V

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage

(Note 3)

V(BR)EBO

-5

—

V

IE = 1μA, IC = 0

DC Current Gain

(Note 3) Current Gain

A

B

C

hFE

125

220

420

—

290

520

250

475

800

—

VCE = -5.0V, IC = -2.0mA

Collector-Emitter Saturation Voltage

(Note 3)

VCE(SAT)

—

-300

-650

mV

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Saturation Voltage

(Note 3)

VBE(SAT)

—

-700

-900

—

mV

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Voltage

(Note 3)

VBE(ON)

-600

—

-750

-820

mV

VCE = -5.0V, IC = -2.0mA

VCE = -5.0V, IC = -10mA

Collector-Cutoff Current

(Note 3)

ICBO

—

-15

-4.0

NA

µA

VCB = -30V

VCB = -30V, TA = 150°C

Gain Bandwidth Product

fT

100

—

MHz

VCE = -5.0V, IC = -10mA, f = 100MHz

Output Capacitance

COB

—

4.5

pF

VCB = -10V, f = 1.0MHz

Noise Figure

NF

—

10

dB

IC = -0.2mA, VCE = -5.0Vdc,

RS = 2.0KΩ, f = 1.0KHz,

BW = 200Hz

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead

3. Short duration pulse test used to minimize self-heating effect.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

G

TOP VIEW

C

E

B

N

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