MMBT123S_2 datasheet(1/3 Pages) DIODES

Part #	MMBT123S

Description	1A NPN SURFACE MOUNT TRANSISTOR

PDF	3 Pages

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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1 / 3 page

MMBT123S

1A NPN SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Ideal for Medium Power Amplification and Switching

•

Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 2 and 4)

Mechanical Data

•

Case: SOT-23

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

•

Terminal Connections: See Diagram

•

Marking Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.008 grams (approximate)

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

α

0

°

8

°

All Dimensions in mm

A

DS30292 Rev. 7 - 2

1 of 3

www.diodes.com

MMBT123S

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

45

V

Collector-Emitter Voltage

VCEO

18

V

Emitter-Base Voltage

VEBO

5

V

Collector Current - Continuous

IC

1

A

Power Dissipation (Note 1)

PD

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RθJA

417

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 3)

Collector-Base Breakdown Voltage

V(BR)CBO

45

⎯

V

IC = 100μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

18

⎯

V

IC = 1mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

5

⎯

V

IE = 100μA, IC = 0

Collector Cutoff Current

ICBO

⎯

1

μA

VCB = 40V, IE = 0

Emitter Cutoff Current

IEBO

⎯

1

μA

VEB = 4V, IC = 0

ON CHARACTERISTICS (Note 3)

DC Current Gain

hFE

150

800

⎯

IC = 100mA, VCE = 1V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

0.5

V

IC = 300mA, IB = 30mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

⎯

8

pF

VCB = 10V, f = 1.0MHz, IE = 0

Current Gain-Bandwidth Product

fT

100

⎯

MHz

VCB = 10V, IE = 50mA,

f = 100MHz

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead. Halogen and Antimony Free.

3. Short duration pulse test used to minimize self-heating effect.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code

V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

E

B

C

E

J

L

TOP VIEW

M

B

C

H

G

D

K

C

B

E

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