DMN2005LPK datasheet(1/4 Pages) DIODES

Part #	DMN2005LPK

Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

Logo

1 / 4 page

DMN2005LPK

Document number: DS30836 Rev. 7 - 2

1 of 4

www.diodes.com

October 2007

DMN2005LPK

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

•

Low On-Resistance

•

Low Gate Threshold Voltage

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Ultra-Small Surface Mount Package

•

Lead Free By Design/RoHS Compliant (Note 2)

•

"Green" Device (Note 3)

•

ESD Protected Gate

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: DFN1006-3

•

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminal Connections: See Diagram

•

Terminals: Finish – NiPdAu over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.001 grams (approximate)

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

DFN1006-3

D

S

G

BOTTOM VIEW

TOP VIEW

Internal Schematic

Equivalent Circuit

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±10

V

Drain Current per element (Note 1)

ID

440

mA

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 1)

PD

450

mW

Thermal Resistance, Junction to Ambient

RθJA

218

°C/W

Operating and Storage Temperature Range

Tj, TSTG

-65 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage

BVDSS

20

⎯

V

VGS = 0V, ID = 100μA

Zero Gate Voltage Drain Current

IDSS

⎯

10

μA

VDS = 17V, VGS = 0V

Gate-Source Leakage

IGSS

⎯

±5

μA

VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

VGS(th)

0.53

⎯

1.2

V

VDS = VGS, ID = 100μA

Static Drain-Source On-Resistance

RDS (ON)

⎯

1.2

1.3

1.2

2.4

2.5

1.5

1.7

3.5

Ω

VGS = 4V, ID = 10mA

VGS = 2.7V, ID = 200mA

VGS = 2.5V, ID = 10mA

VGS = 1.8V, ID = 200mA

VGS = 1.5V, ID = 1mA

Forward Transfer Admittance

|Yfs|

40

⎯

mS

VDS = 3V, ID = 10mA

Notes:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead

3. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php

4. Short duration pulse test used to minimize self-heating effect.

Similar Part No. - DMN2005LPK

Manufacturer	Part #	Datasheet	Description
Diodes Incorporated	DMN2005LPK	130Kb / 4P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30836 Rev. 3 - 1
	DMN2005LPK-7	130Kb / 4P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30836 Rev. 3 - 1
	DMN2005LPK-7	461Kb / 7P	N-CHANNEL ENHANCEMENT MODE MOSFET Rev 10
	DMN2005LPK-7B	461Kb / 7P	N-CHANNEL ENHANCEMENT MODE MOSFET Rev 10
	DMN2005LPK	461Kb / 7P	N-CHANNEL ENHANCEMENT MODE MOSFET Rev 10

More results

Similar Description - DMN2005LPK

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PHD83N03LT	282Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
	PHP112N06T	262Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-07 March 2001
	PHP47NQ10T	267Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-16 May 2001
	PHP78NQ03LT	292Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-14 November 2001
	SI4410DY	266Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 02-05 July 2001
	SI4416DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-05 June 2001
	SI4420DY	254Kb / 12P	N-channel enhancement mode field-effect transistor Rev. 01-28 May 2001
	SI9956DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
Fairchild Semiconductor	FDC633N	278Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
Fairchild Semiconductor	FDT459N	89Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor

More results

DMN2005LPK Datasheet(PDF) 1 Page - Diodes Incorporated

DMN2005LPK Datasheet(HTML) 1 Page - Diodes Incorporated

Similar Part No. - DMN2005LPK

Similar Description - DMN2005LPK

Html Pages

1 2 3 4

Datasheet Download

Link URL