 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
DMP2004TK Datasheet(PDF) 1 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
DMP2004TK Datasheet(HTML) 1 Page - Diodes Incorporated |
|
|
1 / 4 page  DMP2004TK Document number: DS30932 Rev. 4 - 2 1 of 4 www.diodes.com March 2009 © Diodes Incorporated DMP2004TK P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Gate • "Green" Device (Note 4) • Qualified to AEC-Q101 standards for High Reliability Mechanical Data • Case: SOT-523 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.002 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Drain Current (Note 1) Steady State TA = 25°C TA = 85°C ID -430 -310 mA Pulsed Drain Current (Note 3) IDM -750 mA Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 1) PD 150 mW Thermal Resistance, Junction to Ambient RθJA 833 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V VGS = 0V, ID = -250mA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1.0 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±1.0 μA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) -0.5 ⎯ -1.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 0.7 1.1 1.7 1.1 1.6 2.4 Ω VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA Forward Transfer Admittance |Yfs| 200 ⎯ ⎯ ms VDS =10V, ID = 0.2A Diode Forward Voltage (Note 5) VSD ⎯ ⎯ -1.4 V VGS = 0V, IS = -115mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ ⎯ 175 pF VDS = -16V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ ⎯ 30 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 20 pF Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1% 4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect. SOT-523 TOP VIEW Equivalent Circuit TOP VIEW Source Gate Protection Diode Gate Drain G S D ESD PROTECTED Please click here to visit our online spice models database. |
Similar Part No. - DMP2004TK |
|
Similar Description - DMP2004TK |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
