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DMN2004WK Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMN2004WK Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DMN2004WK Document number: DS30934 Rev. 4 - 2 1 of 4 www.diodes.com January 2009 © Diodes Incorporated DMN2004WK N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2KV • "Green" Device (Note 4) • Qualified to AEC-Q101 standards for High Reliability Mechanical Data • Case: SOT-323 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish − Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.006 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Drain Current (Note 1) Steady State TA = 25°C TA = 85°C ID 540 390 mA Pulsed Drain Current (Note 3) IDM 1.5 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 1) PD 200 mW Thermal Resistance, Junction to Ambient RθJA 625 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 16V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±1 μA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 0.5 ⎯ 1.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 0.4 0.5 0.7 0.55 0.70 0.9 Ω VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA Forward Transfer Admittance |Yfs| 200 ⎯ ⎯ ms VDS =10V, ID = 0.2A Diode Forward Voltage (Note 5) VSD 0.5 ⎯ 1.4 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ ⎯ 150 pF VDS = 16V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ ⎯ 25 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 20 pF Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect. SOT-323 TOP VIEW ESD protected up to 2kV Source EQUIVALENT CIRCUIT Gate Protection Diode Gate Drain TOP VIEW GS D |
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