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DMP2022LSS Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP2022LSS Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page ![]() DMP2022LSS Document number: DS31373 Rev. 5 - 2 2 of 5 www.diodes.com June 2010 © Diodes Incorporated DMP2022LSS Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) -0.6 0.77 -1.1 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 8 13 m Ω VGS = -10V, ID = -10A ⎯ 11 16 VGS = -4.5V, ID = -9A ⎯ 17 22 VGS = -2.5V, ID = -8A Forward Transconductance gfs ⎯ 28 ⎯ S VDS = -10V, ID = -10A Diode Forward Voltage (Note 5) VSD -0.5 0.68 -1.2 V VGS = 0V, IS = -3A DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Ciss ⎯ 2444 ⎯ pF VDS = -10V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 594 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 556 ⎯ pF Gate Resistance RG ⎯ 2.0 ⎯ Ω VGS = 0V VDS = 0V, f = 1MHz SWITCHING CHARACTERISTICS (Note 6) Total Gate Charge Qg ⎯ 28.1 56.9 ⎯ nC VDS = -10V, VGS = -4.5V, ID = -10A VDS = -10V, VGS = -10V, ID = -10A Gate-Source Charge Qgs ⎯ 3.4 ⎯ VDS = -10V, VGS = -10V, ID = -10A Gate-Drain Charge Qgd ⎯ 11.9 ⎯ VDS = -10V, VGS = -10V, ID = -10A Turn-On Delay Time tD(on) ⎯ 7.5 15 ns VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω Turn-On Rise Time tr ⎯ 9.9 20 Turn-Off Delay Time tD(off) ⎯ 108.0 216 Turn-Off Fall Time tf ⎯ 76.5 153 Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to product testing. 0 0.5 1.0 1.5 2.0 Fig. 1 Typical Output Characteristic -V , DRAIN-SOURCE VOLTAGE (V) DS 0 5 10 15 20 25 30 Fig. 2 Typical Transfer Characteristics 0 5 10 15 20 25 30 0.5 1 1.5 2 2.5 -V , GATE SOURCE VOLTAGE (V) GS V = -5V Pulsed DS |
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