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DMP2066LSD Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP2066LSD Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 4 page ![]() DMP2066LSD Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) -0.6 -0.94 -1.2 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ 29 55 40 70 m Ω VGS = -4.5V, ID = -4.6A VGS = -2.5V, ID = -3.8A Forward Transconductance gfs ⎯ 9 ⎯ S VDS = -10V, ID = -4.6A Diode Forward Voltage (Note 5) VSD -0.5 -0.72 -1.4 V VGS = 0V, IS = -2.1A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 820 ⎯ pF Output Capacitance Coss ⎯ 200 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 160 ⎯ pF VDS = -15V, VGS = 0V f = 1.0MHz Gate Resistance RG ⎯ 2.5 ⎯ Ω VDS = 0V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Total Gate Charge QG ⎯ 10.1 ⎯ Gate-Source Charge QGS ⎯ 1.5 ⎯ Gate-Drain Charge QGD ⎯ 4.3 ⎯ nC VDS = -10V, VGS = -4.5V, ID = -5.9A Turn-On Delay Time td(on) ⎯ 4.4 ⎯ Rise Time tr ⎯ 9.9 ⎯ Turn-Off Delay Time td(off) ⎯ 28.0 ⎯ Fall Time tf ⎯ 23.4 ⎯ ns VDS = -10V, VGS = -4.5V, ID = -1A, RG = 6.0Ω Notes: 5. Short duration pulse test used to minimize self-heating effect. 0 6 12 18 24 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Fig. 1 Typical Output Characteristic V , DRAIN-SOURCE VOLTAGE (V) DS V = 1.5V GS V = 2.0V GS V = 2.5V GS V = 3.0V GS V = 4.5V GS V = 10V GS 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 Fig. 2 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V) GS T = -55°C A T = 25°C A T = 85°C A T = 125°C A T = 150°C A V = 5.0V DS DMP2066LSD Document number: DS31453 Rev. 3 - 2 2 of 4 www.diodes.com August 2008 © Diodes Incorporated |
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