DMN3007LSS

Document number: DS31460 Rev. 5 - 2

2 of 5

www.diodes.com

April 2010

© Diodes Incorporated

DMN3007LSS

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

30

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

1

μA

Gate-Source Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.3

⎯

2.1

V

Static Drain-Source On-Resistance

⎯

5

7.9

7

10

m

Ω

Forward Transconductance

⎯

16.4

⎯

S

Diode Forward Voltage (Note 5)

⎯

0.67

1.2

V

DYNAMIC CHARACTERISTICS

Input Capacitance

⎯

2714

⎯

pF

f = 1.0MHz

Output Capacitance

⎯

436

⎯

pF

Reverse Transfer Capacitance

⎯

380

⎯

pF

Gate Resistance

⎯

0.7

⎯

Ω

SWITCHING CHARACTERISTICS

Total Gate Charge

⎯

31.2

64.2

⎯

nC

Gate-Source Charge

⎯

7.1

⎯

Gate-Drain Charge

⎯

17.1

⎯

Turn-On Delay Time

⎯

10.3

⎯

ns

Rise Time

⎯

14.8

⎯

Turn-Off Delay Time

⎯

85.1

⎯

Fall Time

⎯

43.6

⎯

Notes:

5. Short duration pulse test used to minimize self-heating effect.

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Fig. 1 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

0

5

10

15

20

25

30

V

= 3.0V

GS

V

= 4.0V

GS

V

= 4.5V

GS

V

= 10V

GS

V

= 2.5V

GS

V

= 2.8V

GS

0

2

4

6

8

10

12

14

16

18

20

22

24

26

28

30

12

3

4

Fig. 2 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A