DMP2066LSN

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

STATIC PARAMETERS

Drain-Source Breakdown Voltage

-20

⎯

⎯

V

⎯

⎯

-1

μA

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

⎯

⎯

±100

nA

Gate Threshold Voltage

-0.6

-0.96

-1.2

V

On State Drain Current (Note 5)

-15

⎯

⎯

A

⎯

29

55

40

70

m

Ω

Static Drain-Source On-Resistance (Note 5)

Forward Transconductance (Note 5)

⎯

9

⎯

S

Diode Forward Voltage (Note 5)

-0.5

-0.72

-1.4

V

Maximum Body-Diode Continuous Current (Note 1)

⎯

⎯

1.7

A

⎯

DYNAMIC PARAMETERS (Note 6)

Input Capacitance

⎯

820

⎯

pF

DMP2066LSN

Document number: DS31467 Rev. 3 - 2

2 of 4

www.diodes.com

August 2008

© Diodes Incorporated

Output Capacitance

⎯

200

⎯

pF

⎯

160

⎯

pF

f = 1.0MHz

Reverse Transfer Capacitance

⎯

2.5

⎯

Ω

f = 1.0MHz

Gate Resistance

SWITCHING CHARACTERISTICS

Total Gate Charge

⎯

10.1

⎯

Gate-Source Charge

⎯

1.5

⎯

⎯

4.3

⎯

nC

Gate-Drain Charge

Turn-On Delay Time

⎯

4.4

⎯

Rise Time

⎯

9.9

⎯

Turn-Off Delay Time

⎯

28.0

⎯

⎯

23.4

⎯

ns

Fall Time

Notes:

5. Test pulse width t = 300

μs.

6. Guaranteed by design. Not subject to production testing.

0

6

12

18

24

30

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Fig. 1 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= 1.5V

GS

V

= 2.0V

GS

V

= 2.5V

GS

V

= 3.0V

GS

V

= 4.5V

GS

V

= 10V

GS

0

4

8

12

16

20

0

0.5

1

1.5

2

2.5

3

3.5

4

Fig. 2 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 5.0V

DS