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DN0150ALP4 Datasheet(PDF) 1 Page - Diodes Incorporated |
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DN0150ALP4 Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DN0150ALP4 / DN0150BLP4 Document number: DS31492 Rev. 3 - 2 1 of 4 www.diodes.com July 2009 © Diodes Incorporated DN0150ALP4 / DN0150BLP4 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Die Construction • Ultra-Small Leadless Surface Mount Package • Ultra Low Profile (0.4mm max) • Complementary PNP Type Available (DP0150ALP4 / DP0150BLP4) • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q 101 Standards for High Reliability Mechanical Data • Case: DFN1006H4-3 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections Indicator: Collector Dot • Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Ordering Information: See Page 3 • Marking Information: See Page 3 • Weight: 0.0008 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current – Continuous IC 100 mA Peak Pulse Collector Current ICM 200 mA Base Current IB 30 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) PD 450 mW Thermal Resistance, Junction to Ambient (Note 3) RθJA 278 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO 60 — — V IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage (Note 4) V(BR)CEO 50 — — V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5 — — V IE = 10μA, IC = 0 Collector Cut-Off Current ICBO — — 0.1 μA VCB = 60V, IE = 0 Emitter Cut-Off Current IEBO — — 0.1 μA VEB = 5V, IC = 0 ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage VCE(SAT) — 0.10 0.25 V IC = 100mA, IB = 10mA DC Current Gain DN0150ADJ DN0150BDJ hFE 120 — 240 — VCE = 6V, IC = 2mA 200 — 400 SMALL SIGNAL CHARACTERISTICS Transition Frequency fT 60 — — MHz VCE = 10V, IE = -1mA f = 30MHz Output Capactiance Cob — 1.3 — pF VCB = 10V, IE = 0, f = 1MHz Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2% Top View Device Schematic Bottom View C E B 1 2 3 Please click here to visit our online spice models database. |
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