MJD32C datasheet(3/6 Pages) DIODES

3 / 6 page

MJD32C

Document number: DS31624 Rev. 3 - 2

3 of 6

www.diodes.com

May 2010

MJD32C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

OFF CHARACTERISTICS (Note 4)

Collector-Emitter Sustaining Voltage

V(SUS)CEO

-100

⎯

IC = -30mA, IB = 0

Collector Cut-off Current

ICEO

⎯

-50

μA

VCB = -60V, IB = 0

Collector Cut-off Current

ICES

⎯

-20

μA

VCE = -100V, VEB = 0

Emitter Cut-off Current

IEBO

⎯

-1.0

VEB = -5.0V, IC = 0

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-1.2

IC = -3.0A, IB = -375mA

Base-Emitter Turn-On Voltage

VBE(ON)

⎯

-1.8

VCE = -4.0V, IC = -3A

DC Current Gain

hFE

⎯

VCE = -4.0V, IC = -1A

VCE = -4.0V, IC = -3A

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

3.0

⎯

MHz

IC = -500mA, VCE = -10V,

f = 1MHz

Small Signal Current Gain

hfe

⎯

VCE = -10V, IC = -0.5A, f = 1KHz

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%.

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Power Dissipation vs. Ambient Temperature

0.5

1.0

1.5

2.0

100

125

150

100

1,000

10,000

-I , COLLECTOR CURRENT (mA)

Fig. 2 Typical DC Current Gain vs. Collector Current

100

1,000

T = 150°C

T = 25°C

T = -55°C

T = 85°C

= -4V

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