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2DC4672 Datasheet(PDF) 1 Page - Diodes Incorporated |
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2DC4672 Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  2DC4672 Document number: DS31636 Rev. 3 - 2 1 of 4 www.diodes.com February 2010 © Diodes Incorporated 2DC4672 NPN SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Complementary PNP Type Available (2DA1797) • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT89-3L • Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.055 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 6 A Continuous Collector Current IC 3 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) @ TA = 25°C PD 0.9 W Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C RθJA 139 °C/W Power Dissipation (Note 4) @ TA = 25°C PD 2 W Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C RθJA 62.5 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ ⎯ V IC = 50μA, IE = 0 Collector-Emitter Breakdown Voltage (Note 5) V(BR)CEO 50 ⎯ ⎯ V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6 ⎯ ⎯ V IE = 50μA, IC = 0 Collector Cut-Off Current ICBO ⎯ ⎯ 0.1 μA VCB = 60V, IE = 0 Emitter Cut-Off Current IEBO ⎯ ⎯ 0.1 μA VEB = 5V, IC = 0 ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 105 350 mV IC = 1A, IB = 50mA DC Current Gain hFE 82 45 ⎯ ⎯ 270 ⎯ ⎯ VCE = 2V, IC = 500mA VCE = 2V, IC = 1.5A SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 17 ⎯ pF VCB = 10V, IE = 0, f = 1MHz Current Gain-Bandwidth Product fT ⎯ 180 ⎯ MHz VCE = 2V, IC = 100mA, f = 100MHz Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Device mounted on FR-4 PCB with 1 inch 2 copper pad layout. 5. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%. Top View Device Schematic Top View Pin Out Configuration 4 3 2 1 C C B E 3 1 2,4 COLLECTOR EMITTER BASE |
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