DMN2016UTS

Document number: DS31995 Rev. 1 - 2

1 of 6

www.diodes.com

December 2009

© Diodes Incorporated

DMN2016UTS

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

•

Low On-Resistance

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Lead Free By Design/RoHS Compliant (Note 1)

•

ESD Protected Up To 2KV

•

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: TSSOP-8L

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminal Connections: See Diagram Below

•

Marking Information: See Page 4

•

Ordering Information: See Page 4

•

Weight: 0.039 grams (approximate)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±8

V

Continuous Drain Current (Note 3)

Steady

State

8.58

5.73

A

Pulsed Drain Current (Note 4)

36

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 3)

0.88

W

141.57

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

TSSOP-8L

TOP VIEW

Internal Schematic

Top View

Pin Configuration

BOTTOM VIEW

ESD PROTECTED TO 2kV

G1

S1

S2

G2

D1

D2

8

7

6

5

1

2

3

4

D

S1

S1

G1

D

S2

S2

G2

Please click here to visit our online spice models database.