FCX493TA datasheet(2/5 Pages) DIODES

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FCX493

SEMICO NDUC TORS

ISSUE 5 - OCTOBER 2005

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

VALUE

UNIT

Collector-base voltage

VCBO

120

Collector-emitter voltage

VCEO

100

Emitter-base voltage

VEBO

Continuous collector current

Peak pulse current

ICM

Base current

200

Power dissipation at Tamb=25°C

Ptot

Operating and storage temperature range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS

Breakdown voltages

V(BR)CBO

120

IC=100µA

VCEO(sus)

100

IC=10mA*

V(BR)EBO

IE=100µA

Collector cut-off currents

ICBO

100

VCB=100V

ICES

100

CES

=100V

Emitter cut-off current

IEBO

100

VEB=4V

Collector-emitter

saturation voltage

VCE(sat)

0.3

0.6

IC=500mA, IB=50mA

IC=1A, IB=100mA

Base-emitter

saturation voltage

VBE(sat)

1.15

IC=1A, IB=100mA

Base-emitter

turn on voltage

VBE(on)

1.0

=1A, VCE=10V

Static forward current transfer

ratio

hFE

100

300

IC=1mA, VCE=10V*

IC=250mA, VCE=10V*

IC=500mA, VCE=10V*

IC=1A, VCE=10V*

Transition frequency

150

MHz

IC=50mA, VCE=10V

f=100MHz

Output capacitance

Cobo

VCB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

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