FMMT6520 datasheet(1/1 Pages) DIODES

Part #	FMMT6520

Description	SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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SOT23 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 2 - NOVEMBER 1995 7

FEATURES

* 350 Volt VCEO

* Gain of 15 at IC=-100mA

APPLICATIONS

* SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS

COMPLEMENTARY TYPE FMMT6517

PARTMARKING DETAIL 520

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-350

V

Collector-Emitter Voltage

VCEO

-350

V

Emitter-Base Voltage

VEBO

-5

V

Continuous Collector Current

IC

-500

mA

Power Dissipation at Tamb= 25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Breakdown Voltages

V(BR)CBO

-350

V

IC=-100µA, IE=0

V(BR)CEO

-350

V

IC=-1mA, IB=0*

V(BR)EBO

-5

V

IE=-10µA, IC=0

Cut-Off Currents

ICBO

-50

nA

VCB=-250V, IE=0

IEBO

-50

nA

VEB=-3V, IC=0

Collector-Emitter

Saturation Voltage

VCE(sat)

-0.3

-0.35

-0.5

-1.0

V

IC=-10mA, IB=-1mA*

IC=-20mA, IB=-2mA*

IC=-30mA, IB=-3mA*

IC=-50mA, IB=-5mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-0.75

-0.85

-0.90

V

IC=-10mA, IB=-1mA*

IC=-20mA, IB=-2mA*

IC=-30mA, IB=-3mA*

Base-Emitter Turn-On

Voltage

VBE(on)

-2.0

V

IC=-100mA, VCE=-10V*

Static Forward Current

Transfer Ratio

hFE

20

30

20

15

200

IC=-1mA, VCE=-10V

IC=-10mA, VCE=-10V*

IC=-30mA, VCE=-10V*

IC=-50mA, VCE=-10V*

IC=-100mA, VCE=-10V*

Output Capacitance

Cobo

6pF

VCB=20V, f=1MHz

Transition Frequency

fT

50

MHz

IC=-10mA, VCE=-20V,

f=20MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

FMMT6520

C

B

E

SOT23

3 - 172

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