FMMTA92 datasheet(1/2 Pages) DIODES

Part #	FMMTA92

Description	SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

PDF	2 Pages

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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SOT23 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 4 - MARCH 2001

✪

PARTMARKING DETAILS:

–

FMMTA92 - 4E

–

FMMTA92R - 8E

COMPLEMENTARY TYPES:

–

FMMTA92 - FMMTA42

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

FMMTA92

UNIT

Collector-Base Voltage

VCBO

-300

V

Collector-Emitter Voltage

VCEO

-300

V

Emitter-Base Voltage

VEBO

-5

V

Continuous Collector Current

IC

-200

mA

Power Dissipation at Tamb = 25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

FMMTA92

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

-300

V

IC=-100µA, IE=0

Collector-Emitter Breakdown

Voltage

V(BR)CEO

-300

V

IC=-1mA, IB=0*

Emitter-Base Breakdown

Voltage

V(BR)EBO

-5

V

IE=-100µA, IC=0

Collector Cut-Off

Current

ICBO

-0.25

µA

VCB=-200V, IE=0

VCB=-160V, IE=0-

Emitter Cut-Off Current

IEBO

-0.1

µA

VEB=-3V, IE=0

Collector-Emitter Saturation

Voltage

VCE(sat)

-0.5

V

IC=-20mA, IB=-2mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-0.9

V

IC=-20mA, IB=-2mA*

Static Forward Current

Transfer Ratio

hFE

25

40

25

IC=-1mA, VCE=10V*

IC=-10mA, VCE=10V*

IC=-30mA,VCE=-10V*

Transition Frequency

fT

50

MHz

IC=-10mA, VCE=-20V

f=20MHz

Output Capacitance

Cobo

6pF

VCB=-20V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

FMMTA92

C

B

E

SOT23

TBA

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