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ZDT751 Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZDT751 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 3 page ![]() ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -80 V IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA, IC=0 Collector Cutoff Current ICBO -0.1 -10 µA µA VCB=-60V VCB=-60V,Tamb=100°C Emitter Cutoff Current IEBO -0.1 µA VEB=-4V, IE=0 Collector-Emitter Saturation Voltage VCE(sat) -0.15 -0.28 -0.3 -0.5 V V IC=1A, IB=-100mA* IC=2A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 -1.25 V IC=1A, IB=-100mA* Base-Emitter Turn-On Voltage VBE(on) -0.8 -1 V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 70 100 80 40 200 200 170 80 300 IC=-50mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* Transition Frequency fT 100 140 MHz IC=-100mA, VCE=-5V f=100MHz Output Capacitance Cobo 30 pF VCB=-10V f=1MHz Switching Times ton 40 ns IC=-500mA, VCC=-10V IB1=IB2=-50mA toff 450 ns *Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤ 2% ZDT751 |
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