ZXMD63P02XTC datasheet(4/7 Pages) DIODES

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ZXMD63P02X

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

-20

ID=-250µA, VGS=0V

Zero Gate Voltage Drain Current

IDSS

-1

µA

VDS=-20V, VGS=0V

Gate-Body Leakage

IGSS

±100

VGS=± 12V, VDS=0V

Gate-Source Threshold Voltage

VGS(th)

-0.7

ID=-250µA, VDS=

VGS

Static Drain-Source On-State Resistance

(1)

RDS(on)

0.27

0.40

Ω

VGS=-4.5V, ID=-1.2A

VGS=-2.7V, ID=-0.6A

Forward Transconductance (3)

gfs

1.3

VDS=-10V,ID=-0.6A

DYNAMIC (3)

Input Capacitance

Ciss

290

VDS=-15 V, VGS=0V,

f=1MHz

Output Capacitance

Coss

120

Reverse Transfer Capacitance

Crss

SWITCHING(2) (3)

Turn-On Delay Time

td(on)

3.4

VDD =-10V, ID=-1.2A

RG=6.0Ω, RD=8.3Ω

(Refer to test

circuit)

Rise Time

9.6

Turn-Off Delay Time

td(off)

16.4

Fall Time

20.4

Total Gate Charge

5.25

VDS=-16V,VGS=-4.5V,

ID=-1.2A

(Refer to test

circuit)

Gate-Source Charge

Qgs

1.0

Gate Drain Charge

Qgd

2.25

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

VSD

-0.95

Tj=25°C, IS=-1.2A,

VGS=0V

Reverse Recovery Time (3)

trr

21.7

Tj=25°C, IF=-1.2A,

di/dt= 100A/

µs

Reverse Recovery Charge(3)

Qrr

9.6

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ISSUE

1 - JUNE 2004

ZXMD63P02XTC Datasheet(PDF) 4 Page - Diodes Incorporated

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