ZXMP3F35N8 datasheet(4/8 Pages) DIODES

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ZXMP3F35N8

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

Drain-Source breakdown

voltage

V(BR)DSS

-30

ID = -250μA, VGS=0V

Zero Gate voltage Drain

current

IDSS

-1.0

µA

VDS=-30V, VGS=0V

Gate-Body leakage

IGSS

100

VGS=±20V, VDS=0V

Gate-Source threshold

voltage

VGS(th)

-1.4

-2.6

ID= -250μA, VDS=VGS

Static Drain-Source

on-state resistance

(*)

RDS(on)

0.012

0.018

Ω

VGS= -10V, ID= -12A

VGS= -4.5V, ID= -10A

Forward

Transconductance

(*) (†)

gfs

VDS= -15V, ID= -12A

Dynamic

(†)

Input capacitance

Ciss

4600

Output capacitance

Coss

730

Reverse transfer

capacitance

Crss

466

VDS= -15V, VGS=0V

f=1MHz

Switching

(‡) (†)

Turn-on-delay time

td(on)

5.4

Rise time

9.9

Turn-off delay time

td(off)

103

Fall time

55.6

VDD= -15V, VGS= -10V

ID= -1A

RG ≅ 6.0Ω,

Gate charge

Total Gate charge

77.1

Gate-Source charge

Qgs

11.6

Gate-Drain charge

Qgd

15.7

VDS= -15V, VGS= -10V

ID= -12A

Source–Drain diode

Diode forward voltage

(*)

VSD

-0.73

-1.2

IS= -1.7A,VGS=0V

Reverse recovery time

(‡)

trr

20.6

Reverse recovery charge

(‡)

Qrr

12.4

IS= -3A,di/dt=100A/μs

NOTES:

(*) Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%.

(†)Switching characteristics are independent of operating junction temperature.

(‡)For design aid only, not subject to production testing

Issue 1 - August 2008

ZXMP3F35N8 Datasheet(PDF) 4 Page - Diodes Incorporated

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