ZXMP4A16K datasheet(4/8 Pages) DIODES

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ZXMP4A16K

Issue 1 - March 2006

www.zetex.com

Electrical characteristics (at TA = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

Drain-source breakdown

voltage

V(BR)DSS

-40

ID=-250 A, VGS=0V

Zero gate voltage drain current IDSS

-1

AVDS=-40V, VGS=0V

Gate-body leakage

IGSS

100

VGS =±20V, VDS=0V

Gate-source threshold voltage

VGS(th)

-1.0

ID=-250 A,

VDS=VGS

Static drain-source on-state

resistance (*)

NOTES:

(*) Measured under pulsed conditions. Width

300µs. Duty cycle

2%.

RDS(on)

0.060

VGS=-10V, ID=-3.8A

0.100

VGS=-4.5V, ID=-2.9A

Forward transconductance (*)(‡) gfs

7.4

VDS=-15V,ID=-3.8A

Dynamic (‡)

Input capacitance

Ciss

965

VDS=-20V, VGS=0V,

f=1MHz

Output capacitance

Coss

180

Reverse transfer capacitance

Crss

158

Switching (†) (‡)

(†) Switching characteristics are independent of operating junction temperature.

(‡) For design aid only, not subject to production testing.

Turn-on delay time

td(on)

4.0

VDD =-20V, ID=-1A

RG=6.0 ,VGS=-10V

Rise time

6.0

Turn-off delay time

td(off)

36.8

Fall time

17.1

Gate charge

16.5

VDS=-20V,VGS=-5V,

ID=-3.8A

Total gate charge

29.6

VDS=-20V,VGS=-10V,

ID=-3.8A

Gate-source charge

Qgs

2.8

Gate-drain charge

Qgd

8.1

Source-drain diode

Diode forward voltage (*)

VSD

-0.89

-1.2

TJ=25°C, IS=-3.8A,

VGS=0V

Reverse recovery time (‡)

trr

29.8

TJ=25°C, IF=-3.8A,

di/dt= 100A/ s

Reverse recovery charge (‡)

Qrr

37.2

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