ZXMP2120G4TA datasheet(3/6 Pages) DIODES

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ZXMP2120G4

ISSUE 2 - SEPTEMBER 2006

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS

Drain-Source

Breakdown Voltage

BVDSS

-200

ID=-1mA, VGS=0V

Gate-Source Threshold

Voltage

VGS(th)

-1.5

-3.5

=-1mA, VDS=VGS

Gate-Body Leakage

IGSS

VGS=

20V, VDS=0V

Zero Gate Voltage Drain

Current

IDSS

-10

-100

µA

VDS=-200 V, VGS=0V

VDS=-160 V, VGS=0V,

T=125°C

(2)

On-State Drain Current

(1)

ID(on)

-300

VDS=-25 V, VGS=-10V

Static Drain-Source On-State

Resistance

(1)

RDS(on)

Ω

VGS=-10V, ID=-150mA

Forward Transconductance

(1)(2)

gfs

VDS=-25V, ID=-150mA

Input Capacitance

(2)

Ciss

100

Common Source Output

Capacitance

(2)

Coss

VDS=-25V, VGS=0V, f=1MHz

Reverse Transfer Capacitance

(2)

Crss

7pF

Turn-On Delay Time

(2)(3)

td(on)

7ns

VDD -25V, ID=-150mA

Rise Time

(2)(3)

Turn-Off Delay Time

(2)(3)

td(off)

Fall Time

(2)(3)

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ®2%

(2) Sample test.

(3) Switching times measured with 50

Ω source impedance and <5ns rise time on a pulse generator

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