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ZXMS6003G Datasheet(PDF) 1 Page - Diodes Incorporated

Part # ZXMS6003G
Description  60V N-channel self protected enhancement mode
PDF  10 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMS6003G Datasheet(HTML) 1 Page - Diodes Incorporated

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Issue 2 - March 2007
1
www.zetex.com
© Zetex Semiconductors plc 2007
ZXMS6003G
60V N-channel self protected enhancement mode
IntelliFETTM MOSFET with programmable current limit
Summary
Continuous drain source voltage
VDS = 60V
On-state resistance
500m
Nominal load current (VIN = 5V)
1.4A
Clamping energy
550mJ
Description
Ordering information
Self protected low side MOSFET. Monolithic over
temperature, over current, over voltage (active
clamp) and ESD protected logic level functionality.
Intended as a general purpose switch, with status
indication and programmable current limit.
Note: Rprog must be connected between the
Status and IN pins
Features
•
Current limit programmable via external
resistor
•
Status pin (analog status indication)
•
Short circuit protection with auto restart
•
Over voltage protection (active clamp)
•
Thermal shutdown with auto restart
•
Over-current protection
•
Input Protection (ESD)
•
Load dump protection (actively protects
load)
•
Logic Level Input
•
High continuous current rating
Device
Part mark
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMS6003GTA
ZXMS6003
7
12
1,000
D
Top view
S
Status
Rprog
IN


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