ZXTD4591E6TC datasheet(4/7 Pages) DIODES

4 / 7 page

ISSUE 1 - JULY 2000

ZXTD4591E6

NPN

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO

IC=100 A

Collector-Emitter Breakdown

Voltage

V(BR)CEO

IC=10mA*

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=100 A

Collector Cut-Off Current

ICBO

100

VCB=60V

Emitter Cut-Off Current

IEBO

100

VEB=4V

Collector Emitter Cut-Off Current

ICES

100

VCES=60V

Collector-Emitter Saturation

Voltage

VCE(sat)

0.25

0.5

IC=500mA, IB=50mA*

IC=1A, IB=100mA*

Base-Emitter Saturation Voltage

VBE(sat)

1.1

IC=1A, IB=100mA*

Base-Emitter Turn-On Voltage

VBE(on)

1.0

IC=1A, VCE=5V*

Static Forward Current Transfer

Ratio

hFE

100

300

IC=1mA, VCE=5V*

IC=500mA, VCE=5V*

IC=1A, VCE=5V*

IC=2A, VCE=5V*

Transition Frequency

150

MHz

IC=50mA, VCE=10V

f=100MHz

Output Capacitance

Cobo

VCB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

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