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ZXTN2018F Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZXTN2018F Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page ![]() ZXTN2018F Issue 2 - September 2005 2 www.zetex.com © Zetex Semiconductors plc 2005 Absolute maximum ratings Thermal resistance Parameter Symbol Limit Unit Collector-base voltage VCBO 140 V Collector-emitter voltage V(BR)CEV 140 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7V Peak pulse current ICM 12 A Continuous collector current (a) IC 5A Base current IB 1A Power dissipation @ TA=25 oC (a) Linear derating factor PD 1.0 8.0 W mW/oC Power dissipation @ TA=25 oC (b) Linear derating factor PD 1.2 9.6 W mW/oC Power dissipation @ TA=25 oC (c) Linear derating factor PD 1.56 12.5 W mW/oC Operating and storage temperature Tj:Tstg -55 to +150 oC Parameter Symbol Value Unit Junction to ambient (a) NOTES: (a) Mounted on 18mm x 18mm X 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. R JA 125 oC/W Junction to ambient (b) (b) Mounted on 30mm x 30mm X 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. R JA 104 oC/W Junction to ambient (c) (c) as (b) above measured at t<5secs. R JA 80 oC/W |
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