4401 datasheet(1/3 Pages) WEITRON

Part #	4401

Description	NPN SiliconGeneral Purpose Transistors

PDF	3 Pages

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Manufacturer	WEITRON [Weitron Technology]

Direct Link	http://www.weitron.com.tw

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FEATURES

Power dissipation

PCM :

0.625

W

（Tamb=25℃）

Collector current

ICM:

0.6

A

Collector-base voltage

V(BR)CBO : 60

V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃

ELECTRICAL

CHARACTERISTICS（Tamb=25℃

unless

otherwise

specified）

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=100μA , IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 1mA ,

IB=0

40

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA,

IC=0

6

　　V

Collector cut-off current

ICBO

VCB=50 V ,

IE=0

0.1

　μA

Collector cut-off current

ICEO

VCE=35 V ,

IB=0

0.1

　μA

Emitter cut-off current

IEBO

VEB=5V ,

IC=0

0.1

　μA

DC current gain

hFE（1）

VCE=1 V,

IC= 150m A

100

300

Collector-emitter saturation voltage

VCE(sat)

IC=150 mA, IB=15m A

0.4

V

Base-emitter saturation voltage

VBE(sat)

IC= 150 mA, IB=15m A

0.95

V

Transition frequency

f T

VCE= 10V, IC= 20mA

f = 100MHz

250

MHz

2N4401

TO-92

1

2

3

1. EMITTER

2. BASE

3. COLLECTOR

WEITRON

http://www.weitron.com.tw

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NPN Silicon

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