ZXTP19020CFF datasheet(4/8 Pages) DIODES

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ZXTP19020CFF

Issue 1 - February 2007

www.zetex.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit Conditions

Collector-base breakdown

voltage

BVCBO

-25

-45

IC = -100 A

Collector-emitter breakdown

voltage (base open)

BVCEO

-20

-30

IC = -10mA (*)

NOTES:

(*) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

Emitter-base breakdown voltage BVEBO

-7

-8.3

IE = -100 A

Emitter-collector breakdown

voltage (reverse blocking)

BVECX

-6

-8.3

IE = -100 A, RBC 1k or

0.25V < VBC < -0.25V

Emitter-collector breakdown

voltage (base open)

BVECO

-5

-8.5

IE = -100 A,

Collector-base cut-off current

ICBO

<-1

-50

VCB = -20V

-20

AVCB = -20V, Tamb= 100°C

Emitter-base cut-off current

IEBO

<-1

-50

VEB = -5.6V

Collector-emitter saturation

voltage

VCE(sat)

-30

-40

IC = -1A, IB = -100mA(*)

-50

-70

IC = -1A, IB = -20mA(*)

-75

-120

IC = -2A, IB = -40mA(*)

-105

-135

IC = -5A, IB = -500mA(*)

Base-emitter saturation voltage VBE(sat)

-925

-1050

IC = -5A, IB = -500mA(*)

Base-emitter turn-on voltage

VBE(on)

-815

-950

IC = -5A, VCE = -2V(*)

Static forward current transfer

ratio

hFE

200

350

500

IC = -100mA, VCE = -2V(*)

170

300

IC = -1A, VCE = -2V(*)

110

180

IC = -5A, VCE = -2V(*)

Transition frequency

200

MHz IC = -50mA, VCE = -10V

f = 100MHz

Output capacitance

Cobo

VCB = -10V, f = 1MHz(*)

Delay time

66.8

VCC = -15V.

IC = -750mA,

IB1 = 15mA, IB2= -15mA.

Rise time

74.9

Storage time

226

Fall time

85.5

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