CEU6336 datasheet(1/4 Pages) CET

Part #	CEU6336

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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N-Channel Enhancement Mode Field Effect Transistor

CED6336/CEU6336

FEATURES

60V, 25A , RDS(ON) = 41mΩ @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

TO-251 & TO-252 package.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM

60

0.06

40

100

25

±20

V

W

A

V

W/ C

1

S

G

D

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

G

S

D

RDS(ON) = 55mΩ @VGS = 4.5V.

Lead free product is acquired.

http://www.cetsemi.com

Rev 1. 2007.Jan

PRELIMINARY

This is preliminary information on a new product in development now .

Details are subject to change without notice .

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

50

3.2

RθJC

RθJA

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