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ZXTP19100CG Datasheet(PDF) 4 Page - Diodes Incorporated

Part # ZXTP19100CG
Description  100V PNP medium transistor in SOT223
PDF  8 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTP19100CG Datasheet(HTML) 4 Page - Diodes Incorporated

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ZXTP19100CG
Issue 1- February 2008
4
www.zetex.com
© Zetex Semiconductors plc 2008
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-Base breakdown
voltage
BVCBO
-110
-135
V
IC = -100µA
Collector-Emitter
breakdown voltage
BVCEO
-100
-135
V
IC= -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%.
Collector-Base breakdown
voltage (forward blocking)
BVCEX
-110
-130
V
IC = -100µA
Emitter-Collector
breakdown voltage
(reverse blocking)
BVECX
-7
-8.3
V
IE = -100µA, RBC < 1kΩ or
0.25V > VBC > -0.25V
Emitter-Collector
breakdown voltage
(reverse blocking)
BVECO
-7
-8.7
V
IE = -100µA
Emitter-Base breakdown
voltage
BVEBO
-7
-8.3
V
IE = -100µA
Collector-Base cut-off
current
ICBO
<1
-50
-0.5
nA
µA
VCB = -110V
VCB = -110V, Tamb=100°C
Emitter cut-off current
IEBO
<1
-50
nA
VEB = -5.6V
Collector-Emitter
saturation voltage
VCE(sat)
-100
-100
-180
-220
-130
-125
-230
-295
mV
mV
mV
mV
IC = -0.5A, IB = -20mA(*)
IC = -1A, IB = -100mA(*)
IC = -1A, IB = -50mA(*)
IC = -2A, IB = -200mA(*)
Base-Emitter saturation
voltage
VBE(sat)
-890
-1000
mV
IC = -2A, IB = -200mA(*)
Base-Emitter turn-on
voltage
VBE(on)
-840
-950
mV
IC = -2A, VCE = -2V(*)
Static forward current
transfer ratio
hFE
200
70
20
300
130
28
500
IC = -100mA, VCE = -2V(*)
IC = -1A, VCE = -2V(*)
IC = -2A, VCE = -2V(*)
Transition frequency
fT
142
MHz
IC = -100mA, VCE = -10V
f = 50MHz
Input capacitance
Cibo
291
400
pF
VEB = -0.5V, f = 1MHz(*)
Output capacitance
Cobo
23.5
40
pF
VCB = -10V, f = 1MHz(*)
Delay time
td
24.7
ns
IC = -500mA, VCC = -10V,
IB1 = -IB2 = -50mA
Rb =100Ω, Rc =20Ω
Rise time
tr
22.4
ns
Storage time
ts
660
ns
Fall time
tf
107
ns



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