ZXTP25040DZ datasheet(5/8 Pages) DIODES

5 / 8 page

ZXTP25040DZ

Issue 1 - December 2007

www.zetex.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-Base breakdown

voltage

BVCBO

-45

-75

IC = -100μA

Collector-Emitter

breakdown voltage

(base open)

BVCEO

-40

-65

IC= -10mA (*)

NOTES:

(*) Measured under pulsed conditions. Pulse width

≤ 300µs; duty cycle ≤ 2%.

Emitter-Collector

breakdown voltage

(reverse blocking)

BVECO

-3

-8.7

IE = -100μA

Emitter-Base breakdown

voltage

BVEBO

-7

-8.2

IE = -100μA

Collector cut-off current

ICBO

<-1

-50

-0.5

μA

VCB = -45V

VCB = -45V, Tamb=100°C

Emitter cut-off current

IEBO

<-1

-50

VEB = -5.6V

Collector-Emitter

saturation voltage

VCE(sat)

-170

-70

-215

-265

-90

-350

IC = -1A, IB = -20mA(*)

IC = -1A, IB = -100mA(*)

IC = -3.5A, IB = -350mA(*)

Base-Emitter saturation

voltage

VBE(sat)

-970

-1050

IC = -3.5A, IB = -350mA(*)

Base-emitter turn-on

voltage

VBE(on)

-870

-950

IC = -3.5A, VCE = -2V(*)

Static forward current

transfer ratio

hFE

300

200

450

300

900

IC = -10mA, VCE = -2V(*)

IC = -1A, VCE = -2V(*)

IC = -3.5A, VCE = -2V(*)

Transition frequency

270

MHz

IC = -50mA, VCE = -10V

f = 100MHz

Input capacitance

Cibo

142

VEB = -0.5V, f = 1MHz(*)

Output capacitance

Cobo

17.4

VCB = -10V, f = 1MHz(*)

Turn-on time

t(on)

75.5

VCC= -15V, IC = -750mA,

IB1 = -IB2 = -15mA,

Turn-off time

t(off)

320

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