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ZXTPS720MC Datasheet(PDF) 4 Page - Diodes Incorporated

Part # ZXTPS720MC
Description  40V PNP LOW SATURATION TRANSISTOR AND
PDF  10 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTPS720MC Datasheet(HTML) 4 Page - Diodes Incorporated

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ZXTPS720MC
Document Number DS31938 Rev. 2 - 2
4 of 10
www.diodes.com
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTPS720MC
Maximum Ratings, Schottky Diode
Parameter
Symbol
Limit
Unit
Continuous Reverse Voltage
VR
40
V
Forward Voltage @ IF = 1000mA (typ)
VF
425
mV
Forward Current
IF
1850
mA
Average Peak Forward Current D=50%
IFAV
3
A
Non Repetitive Forward Current t
≤ 100µs
t
≤ 10ms
IFSM
12
7
A
A
Thermal Characteristics, Schottky Diode
Characteristic
Symbol
Value
Unit
Power Dissipation at TA = 25°C (Notes a and f)
Linear Derating Factor
PD
1.2
12
W
mW/
°C
Power Dissipation at TA = 25°C (Notes b and f)
Linear Derating Factor
PD
2
20
W
mW/
°C
Power Dissipation at TA = 25°C (Notes c and f)
Linear Derating Factor
PD
0.8
8
W
mW/
°C
Power Dissipation at TA = 25°C (Notes d and f)
Linear Derating Factor
PD
0.9
9
W
mW/
°C
Power Dissipation at TA = 25°C (Notes d and g)
Linear Derating Factor
PD
1..36
13.6
W
mW/
°C
Power Dissipation at TA = 25°C (Notes e and g)
Linear Derating Factor
PD
2.4
24
W
mW/
°C
Junction to Ambient (Notes a and f)
RθJA
83
°C/W
Junction to Ambient (Notes b and f)
RθJA
51
°C/W
Junction to Ambient (Notes c and f)
RθJA
125
°C/W
Junction to Ambient (Notes d and f)
RθJA
111
°C/W
Junction to Ambient (Notes d and g)
RθJA
73.5
°C/W
Junction to Ambient (Notes e and g)
RθJA
41.7
°C/W
Junction Temperature
TJ
125
°C
Operating and Storage Temperature Range
TSTG
-55 to +150
°C
Notes:
a. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper
area is split down the centre line into two separate areas with one half connected to each half of the dual device.
b. Measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
c. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
d. For a dual device surface mounted on 10 sq cm single sided 1 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
e. For a dual device surface mounted on 85 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
f. For a dual device with one active die.
g. For dual device with 2 active die running at equal power.



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