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2SC4781 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC4781 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 3 page  2SC4781 2004-07-26 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4781 Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 80 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V VCES 30 Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 6 V DC IC 4 Collector current Pulsed ICP 8 A Base current IB 0.8 A Collector power dissipation PC 900 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 30 V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 10 ― ― V hFE (1) VCE = 2 V, IC = 1 A 200 ― 600 DC current gain hFE (2) VCE = 2 V, IC = 4 A 140 300 ― Collector-emitter saturation voltage VCE (sat) IC = 4 A, IB = 80 mA ― 0.28 0.5 V Base-emitter voltage VBE VCE = 2 V, IC = 4 A ― 1.0 1.5 V Transition frequency fT VCE = 2 V, IC = 0.5 A ― 170 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 50 ― pF Unit: mm JEDEC ― JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) |
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