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2SC5174 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # 2SC5174
Description  Power Amplifier Applications
PDF  3 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5174 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SC5174
2004-07-26
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5174
Power Amplifier Applications
Driver Stage Amplifier Applications
• High transition frequency: fT = 100 MHz (typ.)
• Complementary to 2SA1932
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Base current
IB
0.1
A
Collector power dissipation
PC
1.8
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 230 V, IE = 0
―
―
1.0
µA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
―
1.0
µA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
230
―
―
V
DC current gain
hFE
VCE = 5 V, IC = 100 mA
100
―
320
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 50 mA
―
―
1.5
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 500 mA
―
―
1.0
V
Transition frequency
fT
VCE = 10 V, IC = 100 mA
―
100
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
20
―
pF
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
C5174
Part No. (or abbreviation code)


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