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2SC5376FV Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC5376FV Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  2SC5376FV 2004-06-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • High Collector Current: IC = 400 mA (max) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 400 mA Base current IB 50 mA Collector power dissipation PC 150 * mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C * : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt) Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-1L1A Weight: 0.0015g (typ.) F A Type Name hFE Classification 1.BASE 2.EMITTER 3.COLLECTOR VESM 1 2 3 0.8±0.05 1.2±0.05 0.5mm 0.45mm 0.45mm 0.4mm |
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