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2SC5755 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SC5755 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 5 page ![]() 2SC5755 2004-07-01 4 rth – tw Collector-emitter voltage VCE (V) Safe Operating Area Pulse width tw (s) 0.001 1 3 10 30 100 1000 0.003 0.01 0.03 0.1 0.3 300 1 3 10 300 1000 30 100 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 2 *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2). These characteristic curves must be derated linearly with increase in temperature. 10 s* 10 ms* 1 ms* 100 µs* 100 ms* 0.03 0.01 0.1 1 10 30 100 0.03 0.1 0.3 1 10 3 DC operation (Ta = 25°C) IC max (continuous) IC max (pulsed)* 3 0.3 |
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