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2SD1221 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SD1221 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SD1221 2010-05-19 3 hFE – IC VCE (sat) – IC IC – VCE IC – VBE Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) Collector current IC (A) Collector current IC (A) Ambient temperature Ta (°C) PC – Ta Collector-emitter voltage VCE (V) Safe Operating Area 0 0 Common emitter Tc = 25°C 90 80 70 60 50 40 30 20 0 3.0 2.0 1.0 2 4 6 8 IB = 10 mA 0 0 Common emitter VCE = 5 V 3.0 2.0 1.0 0.4 0.8 1.2 1.6 25 −25 Tc = 100°C Common emitter VCE = 5 V 500 100 50 30 10 0.03 0.1 0.3 1 3 300 25 −25 Tc = 100°C Common emitter IC/IB = 10 1 0.5 0.3 0.1 0.05 0.02 0.03 0.1 0.3 1 3 25 −25 Tc = 100°C 24 0 0 (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 mm × 50 mm × 0.8 mm (3) No heat sink 25 50 75 100 125 150 175 4 8 12 16 20 (1) (2) (3) *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 10 IC max (continuous) IC max (pulsed)* VCEO max 1 ms* 10 ms* DC operation (Tc = 25°C) 30 100 3 10 1 1 0.1 0.3 0.5 5 3 100 ms* |
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