CJD200 NPN

CJD210 PNP

SURFACE MOUNT

COMPLEMENTARY SILICON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CJD200, CJD210

types are Complementary Silicon Power Transistors

manufactured in a surface mount package designed for

high current amplifier applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

8.0

V

Continuous Collector Current

IC

5.0

A

Peak Collector Current

ICM

10

A

Continuous Base Current

IB

1.0

A

Power Dissipation

PD

12.5

W

Power Dissipation (TA=25°C)

PD

1.4

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJC

10

°C/W

Thermal Resistance

ΘJA

89.3

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=40V

100

nA

ICBO

VCB=40V, TC=125°C

100

µA

IEBO

VEB=8.0V

100

nA

BVCEO

IC=10mA

25

V

VCE(SAT)

IC=500mA, IB=50mA

0.3

V

VCE(SAT)

IC=2.0A, IB=200mA

0.75

V

VCE(SAT)

IC=5.0A, IB=1.0A

1.8

V

VBE(SAT)

IC=5.0A, IB=1.0A

2.5

V

VBE(ON)

VCE=1.0V, IC=2.0A

1.6

V

hFE

VCE=1.0V, IC=500mA

70

hFE

VCE=1.0V, IC=2.0A

45

180

hFE

VCE=2.0V, IC=5.0A

10

fT

VCE=10V, IC=100mA, f=10MHz

65

MHz

Cob

VCB=10V, IE=0, f=0.1MHz (CJD200)

80

pF

Cob

VCB=10V, IE=0, f=0.1MHz (CJD210)

120

pF

DPAK TRANSISTOR CASE

R2 (4-January 2010)

www.centra lsemi.com