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CMPT2907A Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part # CMPT2907A
Description  SURFACE MOUNT PNP SILICON TRANSISTOR
PDF  2 Pages
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Manufacturer  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

CMPT2907A Datasheet(HTML) 1 Page - Central Semiconductor Corp

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CMPT2907A
SURFACE MOUNT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2907A
type is a PNP silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for small signal general
purpose and switching applications.
MARKING CODE: C2F
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
357
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=50V
10
nA
ICBO
VCB=50V, TA=125°C
10
µA
ICEV
VCE=30V, VEB=0.5V
50
nA
BVCBO
IC=10µA
60
V
BVCEO
IC=10mA
60
V
BVEBO
IE=10µA
5.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.4
V
VCE(SAT)
IC=500mA, IB=50mA
1.6
V
VBE(SAT)
IC=150mA, IB=15mA
1.3
V
VBE(SAT)
IC=500mA, IB=50mA
2.6
V
hFE
VCE=10V, IC=0.1mA
75
hFE
VCE=10V, IC=1.0mA
100
hFE
VCE=10V, IC=10mA
100
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
50
fT
VCE=20V, IC=50mA, f=100MHz
200
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
pF
Cib
VBE=2.0V, IC=0, f=1.0MHz
30
pF
SOT-23 CASE
R5 (1-February 2010)
www.centr a lsemi.com


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