CMRDM7590

SURFACE MOUNT

DUAL P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFETS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMRDM7590 is

an Enhancement-mode Dual P-Channel Field Effect

Transistor designed for high speed pulsed amplifier

and driver applications. This MOSFET offers Low

rDS(ON) and Low Threshold Voltage.

MARKING CODE: CW

APPLICATIONS:

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Powered Portable Devices

FEATURES:

• Power Dissipation: 125mW

• Low Package Profile: 0.5mm (MAX)

• Low rDS(ON)

• Low Threshold Voltage

• Logic Level Compatibility

• Small SOT-963 Surface Mount Package

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

8.0

V

Continuous Drain Current (Steady State)

ID

140

mA

Continuous Drain Current, tp<5.0s

ID

180

mA

Power Dissipation

PD

125

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

1000

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IGSSF, IGSSR VGS=5.0V, VDS=0

100

nA

IDSS

VDS=5.0V, VGS=0

50

nA

IDSS

VDS=16V, VGS=0

100

nA

BVDSS

VGS=0, ID=250μA

20

V

VGS(th)

VDS=VGS, ID=250μA

0.4

1.0

V

rDS(ON)

VGS=4.5V, ID=100mA

4.0

5.0

Ω

rDS(ON)

VGS=2.5V, ID=50mA

5.5

7.0

Ω

rDS(ON)

VGS=1.8V, ID=20mA

8.0

10

Ω

rDS(ON)

VGS=1.5V, ID=10mA

11

17

Ω

rDS(ON)

VGS=1.2V, ID=1.0mA

20

Ω

gFS

VDS=5.0V, ID=125mA

1.3

S

Crss

VDS=15V, VGS=0, f=1.0MHz

1.0

pF

Ciss

VDS=15V, VGS=0, f=1.0MHz

12

pF

Coss

VDS=15V, VGS=0, f=1.0MHz

2.7

pF

ton

VDD=10V, VGS=4.5V, ID=200mA

60

ns

toff

VDD=10V, VGS=4.5V, ID=200mA

210

ns

SOT-963 CASE

R1 (8-February 2010)

www.centra lsemi.com

• Device is Halogen Free by design