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CP359R Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CP359R Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() GEOMETRY PROCESS DETAILS PRINCIPAL DEVICE TYPE CMRDM3590 GROSS DIE PER 6 INCH WAFER 290,000 PROCESS CP359R Small Signal MOSFET N-Channel Enhancement-Mode MOSFET Chip Die Size 9.1 x 9.1 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 2.5 MILS DIAMETER Source Bonding Pad Area 3.9 x 3.9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å www.centr a lsemi.com R0 (13-May 2010) |
Similar Part No. - CP359R |
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Similar Description - CP359R |
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