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CP710V Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CP710V Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() GEOMETRY PROCESS DETAILS PRINCIPAL DEVICE TYPES CMLTA94 CMPTA94 CMPTA92E CXTA92 CZTA92 CZTA94 GROSS DIE PER 5 INCH WAFER 25,214 PROCESS CP710V Small Signal Transistor PNP - High Voltage Transistor Chip Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å www.centra lsemi.com R0 (5-August 2010) |
Similar Part No. - CP710V |
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Similar Description - CP710V |
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