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CP757X Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CP757X Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() GEOMETRY PRINCIPAL DEVICE TYPE CMLDM5757 GROSS DIE PER 6 INCH WAFER 63,570 PROCESS CP757X Small Signal MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 22 x 17 MILS Die Thickness 5.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 14 x 9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å www.centr a lsemi.com R0 (2-December 2010) |
Similar Part No. - CP757X |
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Similar Description - CP757X |
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