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CPD04 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CPD04 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() GEOMETRY PROCESS DETAILS PRINCIPAL DEVICE TYPES 1N645 thru 1N649 CBRHD-02 Series GROSS DIE PER 4 INCH WAFER 18,000 PROCESS CPD04 General Purpose Rectifier 500mA Glass Passivated Rectifier Chip Process GLASS PASSIVATED MESA Die Size 26 x 26 MILS Die Thickness 8.5 MILS Anode Bonding Pad Area 14 x 14 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization Ni/Au - 5,000Å/2,000Å www.centr a lsemi.com R4 (22-March 2010) |
Similar Part No. - CPD04_10 |
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Similar Description - CPD04_10 |
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