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2SB798 Datasheet(PDF) 3 Page - Unisonic Technologies |
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2SB798 Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() 2SB798 PNP EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R208-020.B TYPICAL CHARACTERISTICS 0100 1.0 Ambient Temperature, Ta ( ) Collector Dissipation vs. Ambient Temperature 150 0.5 50 200 250 0 1.5 2.0 2.5 -0.4 -0.6 -20 Collector Current vs. Base to Emitter Voltage -0.7 -5 -10 -50 -2 -0.5 -0.8 -0.9 -1 -100 -200 -500 -1000 Base to Emitter Voltage, VBE (V) -1.0 When mounted on a ceramic substrate of 16cm2 *0.7mm VCE=-0.6V PULSDE -1 -5 50 DC Current Gain vs.Collector Current -10 20 -2 -20-50 10 100 200 Collector Current, IC (A) -100-200 500 1000 -500-1-2 -5 -0.05 Collector and Base Saturation Voltage vs. Collector Current -0.02 -0.01 -0.1 -0.2 Collector Current, IC (A) -0.5 -1 -2 -5 -10 VCE=1.0V PULSED Ta=75 Ta=-25 Ta=25 IC=10*IB VBE(sat) VCE(sat) |
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