IXFB60N80P datasheet(1/4 Pages) IXYS

Part #	IXFB60N80P

Description	PolarHV HiPerFET Power MOSFET

PDF	4 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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DS99560E(02/06)

PolarHVTM HiPerFET

Power MOSFET

V

DSS

= 800

V

I

D25

=60

A

R

DS(on) ≤

≤≤≤≤ 140 mΩ

Ω

t

rr

≤≤≤≤≤ 250 ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

l International standard packages

l Fast recovery diode

l Unclamped Inductive Switching (UIS)

rated

l Low package inductance

- easy to drive and to protect

Advantages

l

Plus 264TM package for clip or spring

l

Space savings

l

High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 3 mA

800

V

GS(th)

V

DS = VGS, ID = 8 mA

3.0

5.0

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±200

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 125° C

3000

µA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25, Note 1

140

m

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25° C to 150° C

800

V

DGR

T

J = 25° C to 150° C; RGS = 1 MΩ

800

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25° C60

A

I

DM

T

C = 25° C, pulse width limited by TJM

150

A

I

AR

T

C = 25° C30

A

E

AR

T

C = 25° C

100

mJ

E

AS

T

C = 25° C5

J

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS,

20

V/ns

T

J ≤150° C, RG = 2 Ω

P

D

T

C = 25° C

1250

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

F

C

Mounting force

30..120/7.5...2.7

N/lb

Weight

10

g

IXFB 60N80P

G = Gate

D = Drain

S = Source

TAB = Drain

PLUS264TM (IXFB)

(TAB)

G

D

S

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