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IXFR36N50P Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXFR36N50P
Description  PolarHV HiPerFET Power MOSFET
PDF  5 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFR36N50P Datasheet(HTML) 1 Page - IXYS Corporation

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© 2006 IXYS All rights reserved
DS99312E(10/05)
PolarHVTM HiPerFET
Power MOSFET
(Electrically Isolated Back Surface)
V
DSS
= 500
V
I
D25
=19
A
R
DS(on) ≤
≤≤≤≤ 190 m Ω
Ω
Ω
Ω
Ω
t
rr
≤≤≤≤≤ 200
ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
l International standard isolated
packages
l UL recognized packages
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l
Fast intrinsic diode
Advantages
l
Easy to mount
l
Space savings
l
High power density
Symbol
Test Conditions
Characteristic Values
(T
J = 25° C unless otherwise specified)
Min.
Typ.
Max.
BV
DSS
V
GS = 0 V, ID = 250 µA
500
V
V
GS(th)
V
DS = VGS, ID = 4 mA
2.5
5.0
V
I
GSS
V
GS = ± 30 VDC, VDS = 0
± 100
nA
I
DSS
V
DS = VDSS
25
µA
V
GS = 0 V
T
J = 125° C
250
µA
R
DS(on)
V
GS = 10 V, ID = IT
190
m
Ω
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J = 25° C to 150° C
500
V
V
DGR
T
J = 25° C to 150° C; RGS = 1 MΩ
500
V
V
GSS
Continuous
± 30
V
V
GSM
Transient
± 40
V
I
D25
T
C = 25° C19
A
I
DM
T
C = 25° C, pulse width limited by TJM
100
A
I
AR
T
C = 25° C36
A
E
AR
T
C = 25° C50
mJ
E
AS
T
C = 25° C
1.5
J
dv/dt
I
S
≤I
DM, di/dt ≤100 A/µs, VDD ≤VDSS,
20
V/ns
T
J ≤150° C, RG = 4 Ω
P
D
T
C = 25° C
156
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°C
V
ISOL
50/60 Hz, RMS, 1 minute
2500
V~
F
C
Mounting Force
(IXFC)
11..65 / 2.5..15
N/lb
(IXFR)
20..120 / 4.5..25
N/lb
Weight
(IXFC)
3
g
(IXFR)
5
g
G = Gate
D = Drain
S = Source
IXFC 36N50P
IXFR 36N50P
G
DS
ISOPLUS220TM (IXFC)
E153432
Isolated back surface
G
D
S
ISOPLUS247TM (IXFR)
E153432
Isolated back surface


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