IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 20 V; I

30

42

S

C

iss

7000

pF

C

oss

V

GS

= 0 V, V

960

pF

C

rss

230

pF

t

d(on)

33

ns

t

r

V

GS

= 10 V, V

22

ns

t

d(off)

R

75

ns

t

f

10

ns

Q

g(on)

190

nC

Q

gs

V

GS

= 10 V, V

40

nC

Q

gd

86

nC

R

thJC

0.31

K/W

R

thCK

0.07

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

48

A

I

SM

Repetitive; pulse width limited by T

JM

192

A

V

SD

I

1.5

V

Note:1

t

rr

250

ns

Q

RM

I

1.0

µC

I

RM

10

A

Note: 1. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

2. I

44N50Q: I

48N50Q: I

ISOPLUS-227 B

IXFE 44N50Q

IXFE 48N50Q