IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

30

47

S

C

iss

6400

pF

C

oss

V

GS

= 0 V, V

1340

pF

C

rss

340

pF

t

d(on)

37

n s

t

r

V

GS

= 10 V, V

36

n s

t

d(off)

R

82

n s

t

f

12

n s

Q

g(on)

190

nC

Q

gs

V

GS

= 10 V, V

51

nC

Q

gd

78

nC

R

thJC

0.31

K/W

R

thCK

0.07

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

GS

= 0 V

73

A

I

SM

Repetitive; pulse width limited by T

JM

292

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

250

n s

Q

RM

I

0.8

µC

I

RM

7A

ISOPLUS-227 B

IXFE 73N30Q

Notes: 1. Pulse width limited by T

JM.

2. Pulse test, t

≤ 300 ms, duty cycle d ≤ 2%.

3. I