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IXFT60N20 Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXFT60N20
Description  HiPerFET Power MOSFETs
PDF  2 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFT60N20 Datasheet(HTML) 1 Page - IXYS Corporation

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© 2001 IXYS All rights reserved
98845 (6/01)
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
200
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 MΩ
200
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C
= 25
°C60
A
I
DM
T
C
= 25
°C, pulse width limited by T
JM
240
A
I
AR
T
C
= 25
°C60
A
E
AR
T
C
= 25
°C50
mJ
E
AS
2.5
J
dv/dt
I
S
≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
5
V/ns
T
J
≤ 150°C, R
G = 2 Ω
P
D
T
C
= 25
°C
300
W
T
J
-55 to +150
°C
T
JM
150
°C
T
stg
-55 to +150
°C
T
L
1.6 mm (0.063 in) from case for 10 s
300
°C
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-247
6
g
TO-268
4
g
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Features
l International standard packages
l Low R
DS (on)
l Rated for unclamped Inductive load
switching (UIS)
l Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l Easy to mount
l Space savings
l High power density
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D = 250µA
200
V
V
GS(th)
V
DS
= V
GS, ID = 4 mA
2.0
4.0
V
I
GSS
V
GS
=
±20 V
DC, VDS = 0
±100
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
°C25
µA
V
GS
= 0 V
T
J
= 125
°C1
mA
R
DS(on)
V
GS
= 10 V, I
D = 0.5 ID25
33
m
Ω
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD (IXFH)
G = Gate
D
= Drain
S = Source TAB = Drain
HiPerFETTM
Power MOSFETs
TO-268 ( IXFT) Case Style
(TAB)
G
S
V
DSS
= 200
V
I
D25
=
60
A
R
DS(on)
=
33 m
Ω
Ω
Ω
Ω
Ω
t
rr ≤
≤≤≤≤ 250 ns
IXFH 60N20
IXFT 60N20
(TAB)
ADVANCE TECHNICAL INFORMATION


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