IXFV52N30PS datasheet(1/5 Pages) IXYS

Part #	IXFV52N30PS

Description	PolarHT Power MOSFET HiPerFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

DS99197F(05/08)

V

DSS

= 300V

I

D25

= 52A

R

DS(on)

≤≤≤≤≤ 66mΩ

Ω

t

rr

≤≤≤≤≤ 200ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

International standard packages

Fast recovery diode

Avalanche rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25°C to 150°C

300

V

DGR

T

J

= 25°C to 150°C, R

GS = 1MΩ

300

V

GSS

Continuous

± 20

V

GSM

Transient

± 30

V

I

D25

T

C = 25°C

52

A

I

DM

T

C = 25°C, pulse width limited by TJM

150

A

I

A

T

C = 25°C

52

A

E

AS

T

C = 25°C

1

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS,TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C

400

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum lead temperature for soldering

300

°C

T

SOLD

Plastic body for 10s

260

°C

M

d

Mounting torque (TO-247)

1.13/10

Nm/lb.in.

F

C

Mounting force (PLUS220)

11..65/2.5..14.6

N/lb.

Weight

PLUS220 & PLUS220SMD

4

g

TO-247

6

g

G = Gate

D

= Drain

S = Source

TAB = Drain

IXFV52N30P

IXFV52N30PS

IXFH52N30P

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

300

V

GS(th)

V

DS = VGS, ID = 4mA

2.5

5.0

V

I

GSS

V

GS = ± 20V, VDS = 0V

± 100 nA

I

DSS

V

DS = VDSS

25

μA

V

GS = 0V

T

J = 125°C

1 mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

66 m

Ω

PolarHTTM Power

MOSFET HiPerFETTM

G

S

D (TAB)

PLUS220SMD (IXFV_S)

TO-247 (IXFH)

PLUS220 (IXFV)

G

D

S

D (TAB)

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