IXFT69N30P datasheet(1/5 Pages) IXYS

Part #	IXFT69N30P

Description	Polar HiPerFET Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25°C to 150°C

300

V

DGR

T

J

= 25°C to 150°C, R

GS = 1MΩ

300

V

GSS

Continuous

± 20

V

GSM

Transient

± 30

V

I

D25

T

C = 25°C

69

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

200

A

I

A

T

C = 25°C

69

A

E

AS

T

C = 25°C

1.5

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ≤ 150°C

20

V/ns

P

D

T

C = 25°C

500

W

T

J

-55 to +150

°C

T

JM

+150

°C

T

stg

-55 to +150

°C

T

L

1.6mm (0.063in) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in.

Weight

TO-247

6

g

TO-268

4

g

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

PolarTM HiPerFETTM

Power MOSFET

IXFH69N30P

IXFT69N30P

DS99220F(10/09)

V

DSS

= 300V

I

D25

= 69A

R

DS(on)

≤≤≤≤≤ 49mΩ

Ω

t

rr

≤≤≤≤≤ 200ns

Features

International Standard Packages

Fast Intrinsic Diode

Avalanche Rated

Low R

DS(ON) and QG

Low Package Inductance

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

DC-DC Coverters

Battery Chargers

Switch-Mode and Resonant-Mode

Power Supplies

DC Choppers

AC and DC Motor Drives

Uninterrupted Power Supplies

High Speed Power Switching

Applications

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250µA

300

V

GS(th)

V

DS = VGS, ID = 4mA

2.5

5.0

V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS = 0V

25 µA

T

J = 125°C

250 µA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

49 m

Ω

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXFH)

TO-268 (IXFT)

G

S

D (Tab)

S

G

D (Tab)

D

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